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		<title>Light Induced Degradation - Revision history</title>
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		<updated>2026-04-18T13:07:11Z</updated>
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	<entry>
		<id>https://wiki.openmod-initiative.org/index.php?title=Light_Induced_Degradation&amp;diff=11033&amp;oldid=prev</id>
		<title>Lilly Schoen: Created page with &quot;{{GlossaryTermTemp |Abbreviation=LID |SubtermOf=Degradation, PV losses |Definition=1. LID  (Light Induced Degradation)  is a loss of performances arising in the very first hou...&quot;</title>
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				<updated>2017-11-03T13:28:01Z</updated>
		
		<summary type="html">&lt;p&gt;Created page with &amp;quot;{{GlossaryTermTemp |Abbreviation=LID |SubtermOf=Degradation, PV losses |Definition=1. LID  (Light Induced Degradation)  is a loss of performances arising in the very first hou...&amp;quot;&lt;/p&gt;
&lt;p&gt;&lt;b&gt;New page&lt;/b&gt;&lt;/p&gt;&lt;div&gt;{{GlossaryTermTemp&lt;br /&gt;
|Abbreviation=LID&lt;br /&gt;
|SubtermOf=Degradation, PV losses&lt;br /&gt;
|Definition=1. LID  (Light Induced Degradation)  is a loss of performances arising in the very first hours of exposition to the sun, with Crystalline modules. It may namely affect the real performance with respect to the final factory flash tests data delivered by some PV module providers. It is unclear how it affects the performances with respect to the specified STC values. If the modules are sorted according to their final factory flash test for determining their Nominal Power class, the LID will indeed represent a loss with respect to STC. The LID loss is related to the quality of the wafer manufacturing, and may be of the order of 1% to 3% (or even more). It is due to traces of Oxygen included in the molten Silicon during the Czochralski process. Under the light exposition effect, these positive-charged O2 dimers may diffuse across the silicon lattice, and create complexes with boron dopant acceptors. The boron-oxygen complexes create their own energy levels in the silicon lattice, and can capture electrons and holes which are lost for the PV effect.&lt;br /&gt;
2. Crystalline  p-type  boron  doped  silicon  solar  cells generally  exhibit  a  degradation  of  conversion  efficiency during  the  first  hours  of  exposure  to  the  sun  light.  This light  induced  degradation  (LID)  is  associated  with the formation  of  the  well  known  boron  oxygen  complex which  acts  as  a  harmful  defect  and  reduces  the  minority carrier  diffusion  length  accordingly.  LID  is  therefore related  to  both,  boron  and  oxygen  concentration.&lt;br /&gt;
|Sources=http://files.pvsyst.com/help/lid_loss.htm (1.); http://isc-konstanz.de/fileadmin/doc/24EU-PVSEC/KPeter.pdf (2.)&lt;br /&gt;
}}&lt;br /&gt;
Author: Svenja Gutt&lt;/div&gt;</summary>
		<author><name>Lilly Schoen</name></author>	</entry>

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