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		<id>https://wiki.openmod-initiative.org/index.php?action=history&amp;feed=atom&amp;title=P-N_junction</id>
		<title>P-N junction - Revision history</title>
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		<updated>2026-05-11T19:06:10Z</updated>
		<subtitle>Revision history for this page on the wiki</subtitle>
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	<entry>
		<id>https://wiki.openmod-initiative.org/index.php?title=P-N_junction&amp;diff=11306&amp;oldid=prev</id>
		<title>Lilly Schoen at 08:16, 16 November 2017</title>
		<link rel="alternate" type="text/html" href="https://wiki.openmod-initiative.org/index.php?title=P-N_junction&amp;diff=11306&amp;oldid=prev"/>
				<updated>2017-11-16T08:16:18Z</updated>
		
		<summary type="html">&lt;p&gt;&lt;/p&gt;
&lt;table class='diff diff-contentalign-left'&gt;
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			&lt;td colspan='2' style=&quot;background-color: white; color:black;&quot;&gt;← Older revision&lt;/td&gt;
			&lt;td colspan='2' style=&quot;background-color: white; color:black;&quot;&gt;Revision as of 08:16, 16 November 2017&lt;/td&gt;
			&lt;/tr&gt;&lt;tr&gt;&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 3:&lt;/td&gt;
&lt;td colspan=&quot;2&quot; class=&quot;diff-lineno&quot;&gt;Line 3:&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;|Definition=1. A p–n junction is a boundary or interface between two types of semiconductor material, p-type and n-type, inside a single crystal of semiconductor. The &amp;quot;p&amp;quot; (positive) side contains an excess of holes, while the &amp;quot;n&amp;quot; (negative) side contains an excess of electrons. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes.&lt;/div&gt;&lt;/td&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;|Definition=1. A p–n junction is a boundary or interface between two types of semiconductor material, p-type and n-type, inside a single crystal of semiconductor. The &amp;quot;p&amp;quot; (positive) side contains an excess of holes, while the &amp;quot;n&amp;quot; (negative) side contains an excess of electrons. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;2. When a p-type semiconductor is brought into a close contact with n-type semiconductor crystal, the resulting arrangement is a PN junction or junction diode. On account of difference in concentration of charge carriers in the two sections, the electrons from n-region diffuses through the junction into p region and the holes from p-region diffuse into n-region. Due to this the electron falls into the vacancy i.e., it completes the covalent bond. This process is called electron-hole recombination. As a result of the migration of charge carriers across the junction, the electrons leave ionised donor atoms which are bound and cannot move. Similarly, the p-region of the junction will have ionised acceptor atoms which are immobile.&lt;/div&gt;&lt;/td&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;2. When a p-type semiconductor is brought into a close contact with n-type semiconductor crystal, the resulting arrangement is a PN junction or junction diode. On account of difference in concentration of charge carriers in the two sections, the electrons from n-region diffuses through the junction into p region and the holes from p-region diffuse into n-region. Due to this the electron falls into the vacancy i.e., it completes the covalent bond. This process is called electron-hole recombination. As a result of the migration of charge carriers across the junction, the electrons leave ionised donor atoms which are bound and cannot move. Similarly, the p-region of the junction will have ionised acceptor atoms which are immobile.&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class='diff-marker'&gt;−&lt;/td&gt;&lt;td style=&quot;background: #ffa; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;|Sources=https://en.wikipedia.org/wiki/P%E2%80%93n_junction &lt;del class=&quot;diffchange diffchange-inline&quot;&gt;6 &lt;/del&gt;(1.); http://www.tutorvista.com/content/physics/physics-iv/semiconductor-devices/p-n-junction.php (2.)&lt;/div&gt;&lt;/td&gt;&lt;td class='diff-marker'&gt;+&lt;/td&gt;&lt;td style=&quot;background: #cfc; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;|Sources=https://en.wikipedia.org/wiki/P%E2%80%93n_junction (1.); http://www.tutorvista.com/content/physics/physics-iv/semiconductor-devices/p-n-junction.php (2.)&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;}}&lt;/div&gt;&lt;/td&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;}}&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;tr&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;Author: Simon Waterstradt&lt;/div&gt;&lt;/td&gt;&lt;td class='diff-marker'&gt;&amp;#160;&lt;/td&gt;&lt;td style=&quot;background: #eee; color:black; font-size: smaller;&quot;&gt;&lt;div&gt;Author: Simon Waterstradt&lt;/div&gt;&lt;/td&gt;&lt;/tr&gt;
&lt;/table&gt;</summary>
		<author><name>Lilly Schoen</name></author>	</entry>

	<entry>
		<id>https://wiki.openmod-initiative.org/index.php?title=P-N_junction&amp;diff=10851&amp;oldid=prev</id>
		<title>Lilly Schoen: Created page with &quot;{{GlossaryTermTemp |SubtermOf=Semiconductor electronics |Definition=1. A p–n junction is a boundary or interface between two types of semiconductor material, p-type and n-ty...&quot;</title>
		<link rel="alternate" type="text/html" href="https://wiki.openmod-initiative.org/index.php?title=P-N_junction&amp;diff=10851&amp;oldid=prev"/>
				<updated>2017-11-03T08:23:55Z</updated>
		
		<summary type="html">&lt;p&gt;Created page with &amp;quot;{{GlossaryTermTemp |SubtermOf=Semiconductor electronics |Definition=1. A p–n junction is a boundary or interface between two types of semiconductor material, p-type and n-ty...&amp;quot;&lt;/p&gt;
&lt;p&gt;&lt;b&gt;New page&lt;/b&gt;&lt;/p&gt;&lt;div&gt;{{GlossaryTermTemp&lt;br /&gt;
|SubtermOf=Semiconductor electronics&lt;br /&gt;
|Definition=1. A p–n junction is a boundary or interface between two types of semiconductor material, p-type and n-type, inside a single crystal of semiconductor. The &amp;quot;p&amp;quot; (positive) side contains an excess of holes, while the &amp;quot;n&amp;quot; (negative) side contains an excess of electrons. The p-n junction is created by doping, for example by ion implantation, diffusion of dopants, or by epitaxy (growing a layer of crystal doped with one type of dopant on top of a layer of crystal doped with another type of dopant). If two separate pieces of material were used, this would introduce a grain boundary between the semiconductors that would severely inhibit its utility by scattering the electrons and holes.&lt;br /&gt;
2. When a p-type semiconductor is brought into a close contact with n-type semiconductor crystal, the resulting arrangement is a PN junction or junction diode. On account of difference in concentration of charge carriers in the two sections, the electrons from n-region diffuses through the junction into p region and the holes from p-region diffuse into n-region. Due to this the electron falls into the vacancy i.e., it completes the covalent bond. This process is called electron-hole recombination. As a result of the migration of charge carriers across the junction, the electrons leave ionised donor atoms which are bound and cannot move. Similarly, the p-region of the junction will have ionised acceptor atoms which are immobile.&lt;br /&gt;
|Sources=https://en.wikipedia.org/wiki/P%E2%80%93n_junction 6 (1.); http://www.tutorvista.com/content/physics/physics-iv/semiconductor-devices/p-n-junction.php (2.)&lt;br /&gt;
}}&lt;br /&gt;
Author: Simon Waterstradt&lt;/div&gt;</summary>
		<author><name>Lilly Schoen</name></author>	</entry>

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